NTE Type Number |
Material | Forward Voltage Drop (Volts) | Maximum Ratings | |||||
Forward DC Current (mA) |
Surge Current for 10msec (Amps) |
Reverse Characteristics @ 100V (mA) | ||||||
VF | IF | IFSM | IR | |||||
Min | Typ | Max | @ IF mA | |||||
606 | Silicon | 1.60 2.05 |
1.80 2.30 |
2.00 2.55 |
1 70 |
150 | 27 | 10 |
607 | Silicon | 2.10 2.70 |
2.35 3.00 |
2.60 3.30 |
1 70 |
100 | 25 | 10 |
Tstg: -40°C to +130°C, Top: -25°C to +70°C |
(TEMPERATURE COMPENSATING DIODES)
NTE Type Number |
Material | Case Style | Maximum Forward Current (mA) |
Forward Voltage Drop | |||
IF | VF (Volts) | VF (mV/°C) | |||||
Min | Max | @ IF mA | |||||
600 | Silicon | DO7 | 10 | 0.63 | 0.69 | 3 | 2.0 |
601 | Silicon | - | 20 | 0.56 | 0.61 | 1.5 | 1.8 |
605A | Silicon | DO35 | 100 | 1.26 | 1.36 | 3 | 4.6 |