Silicon Unijunction Transistors (UJT)
NTE Type
Number		 Case Style Maximum Ratings Intrinsic
Stand Off
Ratio
(pF)		 Interbase
Resistance
(k Ohms)		 Valley
Point
Current
(mA)
RMS
Emitter
Current
(mA)		 Interbase
Voltage
(Volts)		 RMS Power
Dissipation
(mW)		 Emitter
Reverse
Current
(µA)
IE VBB PD IEO RBBO IV
6400 TO39 50 35 450 12 Min Max Min Max 8 Min
0.45 0.80 4 12
6400A TO39 50 55 450 1 0.54 0.67 4 12 8 Min
6401 TO18 50 35 300 12 0.56 0.75 4.7 9.1 4 Min
6409 TO18 50 35 300 0.2 0.68 0.82 4.7 9.1 8 Min
6410 TO92 50 35 300 0.005 Typ 0.70 0.85 4 9.1 4 Min

Programmable Unijunction Transistor (PUT)
NTE Type
Number		 Case Style Maximum Ratings Gate
Current
(mA)		 Peak
Current
@ VS = 10V
(µA)		 Offset
Voltage
@ VS = 10V
(Volts)		 Minimum
Valley Voltage
@ VS = 10V
(µA)
Gate to
Cathode
Forward
Voltage
(Volts)		 Gate to
Cathode
Reverse
Voltage
(Volts)		 Anode to
Cathode
Voltage
(Volts)		 Power
Dissipation
(mW)
BVGKF BVGKR BVAK PD IG IP VT IV
6402 TO98/TO92 +40 -5 ±40 300 ±20 2 @ RS = 1M Ohm 1.6 @ Rg = 1M Ohm 70 @ Rg = 1M Ohm
5 @ RS = 10k Ohm 0.6 @ Rg = 10k Ohm 1.5mA @ Rg = 10k Ohm
DESCRIPTION:
This device has been characterized as a Programmable Unijunction Transistor (PUT), offering many advantages over conventional unijunction transistors. The designer can select R1 and R2 to program unijunction characteristics such as intrinsic standoff ratio, interbase resistance, and valley point current to meet particular needs. Applications of the PUT include timers, high gain phase control circuits, and relaxation oscillators.

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