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Back| NTE Type No. |
Output Configuration |
Total Device Ratings | Maximum LED Ratings | Photo FET Ratings | |||||||
| Isolation Voltage Surge (Volts) |
Total Power (mW) |
Forward Current (mA) |
Forward Voltage (V) |
Reverse Voltage (Volts) |
Drain to Source Breakdown Voltage (Volts) |
Drain Current (mA) |
On-State Resistance (Ohms) |
Turn-On Time (µs) |
Turn-Off Time (µs) | ||
| VISO | PT | IF | VF | VR | V(BR)DSS | ID | RDS(ON) | ton | toff | ||
| 3085 | Bilateral Analog FET | 2500 | 300 | 60 | 1.75 | 62 | ±30 | ±100 | 200 | 15 | 15 |
Description:
The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals.