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Index| NTE Type Number |
Case Style | Maximum Ratings | |||||||
| Peak Recurrent Forward Current (Amps) |
DC Forward Anode Current (mA) |
Power Dissipation (mW) |
Switching Voltage (Volts) |
Switching Current (µA) |
Holding Current (mA) |
Off-State Current @ 5V (µA) |
On-State Forward Voltage Drop IF = 175mA (Volts) | ||
| IFp | IF | PD | VS | IS | IH | IB | VF | ||
| 6403 | TO92 / TO98 | 1 | 175 | 300 | 6 Min to 10 Max | 500 | 1.5 | 1 | 1.7 |
| DESCRIPTION: Silicon Bilateral Switches are specifically designed and characterized for applications where stability of switching voltage over a wide temperature range and well matched bilateral characteristics are an asset. They are ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control circuits. |
| NTE Type Number |
Case Style | Switching Forward Voltage (Volts) |
Forward Current (µA) |
Holding Current (mA) |
Power Dissipation (mW) |
DC Forward Anode Current (mA) |
Peak Recurrent Forward Current (Amps) |
Forward Voltage Drop @ IF (mW) |
Switching Speeds (µs) | ||
| Turn-On | Turn-Off | ||||||||||
| VS | IS | IH | PD | IF | IF(Peak) | VF | ton | toff | |||
| 6404 | TO98 | Min | Max | 200 | 0.75 | 300 | 175 | 1 | 1.5 | 1 | 25 |
| 7 | 9 | ||||||||||
| DESCRIPTION: The NTE6404 is a silicon planer, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four layer diode. This device is designed to switch at 8V with a 0.02%/°C temperature coefficient. A gated lead is provided to eliminate rate effect, obtaining triggering at lower voltages and to obtain transient free wave forms. Silicon Unilateral Switches are specifically designed and characterized for use in monostable and bistable applications where low cost is of prime importance. |
| NTE Type Number |
Case Style | Polarity | Maximum Ratings | DC Current Gain @ VCB = 0, IE = 1mA | |||||||
| Collector to Base Breakdown Voltage (Volts) |
Emitter to Base Breakdown Voltage (Volts) |
Collector to Emitter Breakdown Voltage RBE = 10k (Volts) |
Emitter Current (mA) |
Collector Current (mA) |
Peak Emitter Current (mA) |
Holding Current (mA) |
Power Dissipation (mW) | ||||
| V(BR)CBO | V(BR)EBO | V(BR)CER | IE | IC | IEM | IH | PD | hFE | |||
| 239 | TO72 | PNP | -70 | -70 | -70 | 100 | 50 | 500 | 1 | 250 | 0.72 to 2.5 |
| NPN | 70 | 5 | 70 | -100 | -500 | ||||||