| Maximim Repetitive Peak Forward Current, IFRM | 250mA | |
| Maximim Repetitive Peak Working Current, IZRM | 250mA | |
| Forward Voltage (IF = 10mA, TJ = +25°C), VF | 900mV | |
| Total Power Dissipation (TA </= +25°C, Note 1), Ptot | 350mW | |
| Maximum Junction Temperature, TJ | +175°C | |
| Storage Temperature Range, Tstg | -65°C to +175°C | |
| Thermal Resistance (TJ = P x (RthJT + RthSA) + TA) | ||
| Junction-to-Tab, RthJT | 50K/W | |
| Tab-to-Soldering Points, RthTS | 280K/W | |
| Soldering Points-to-Ambient (Note 1), RthSA | 90K/W |
Note 1.Device mounted on a ceramic substrate of 8mm x 10mm x 0.7mm.
Electrical Characteristics: (TJ = +25°C, unless otherwise specified)
| NTE Type Number |
Nominal Zener Voltage Vz @ Izt |
Zener Test Current Izt |
Reverse Current IR @ VR |
Typical Differential Resistance rdiff @ Izt |
Typical Temperature Coefficient SZ @ Izt |
Typical Diode Capacitance Cd (Note 2) | |
| Volts | mA | Ohm | mV/K | pF | |||
| 5005SM | 3.3 | 5 | 5µA | 1V | 85 | -2.4 | 325 |
| 5006SM | 3.6 | 5 | 5µA | 1V | 85 | -2.4 | 300 |
| 5007SM | 3.9 | 5 | 3µA | 1V | 85 | -2.5 | 300 |
| 5008SM | 4.3 | 5 | 3µA | 1V | 80 | -2.5 | 275 |
| 5009SM | 4.7 | 5 | 2µA | 1V | 78 | -1.4 | 245 |
| 5010SM | 5.1 | 5 | 2µA | 2V | 40 | -0.8 | 235 |
| 5011SM | 5.6 | 5 | 1µA | 2V | 15 | 1.2 | 225 |
| 5013SM | 6.2 | 5 | 100nA | 2V | 10 | 2.3 | 125 |
| 5014SM | 6.8 | 5 | 100nA | 3V | 8 | 3.0 | 105 |
| 5015SM | 7.5 | 5 | 100nA | 5V | 6 | 4.0 | 95 |
| 5018SM | 9.1 | 5 | 500nA | 6V | 6 | 5.5 | 70 |
| 5021SM | 12.0 | 5 | 100nA | 0.7VZnom | 10 | 8.4 | 65 |
| 5024SM | 15.0 | 5 | 50nA | 0.7VZnom | 10 | 11.4 | 55 |
| 5027SM | 18.0 | 5 | 50nA | 0.7VZnom | 10 | 14.4 | 47 |
| 5031SM | 24.0 | 5 | 50nA | 0.7VZnom | 25 | 20.4 | 33 |
Note 2. VR = 0, f = 1MHz.
