NTE5700 thru NTE5705
Industrial Power Module

Description:

The NTE5700 throygh NTE5705 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. Applications include power supplies, control circuits, and battery chargers.

Features:

Absolute Maximum Ratings:
Maximum Repetitive Peak Reverse Voltage (VS </= 0), VRRM     1200V
Maximum Non-Repetitive Peak Reverse Voltage, VRSM     1300V
Maximum Repetitive Peak Off-State Voltage (Gate Open Circuit), VDRM     1200V
 
Thermal and Mechanical Characteristics:
Junction Operating Temperature Range, TJ     -40° to +125°C
Storage Temperature Range, Tstg     -40° to +150°C
Maximum Internal Thermal Resistance, One Junction-to-Case, RthJC      
            DC Operation     2.24K/W
Maximum Thermal Resistance, Base-to-Heatsink, RthCS      
            Mounting Surface Smooth and Greased     0.10K/W
Mounting Torque, Base-to-Heatsink ±10% (Note 1), T     5Nm
Approximate Weight, wt     58g (2oz)

Note 1.A mounting compound is recommended and the torque should be checked after a period of about 3 hours to allow for the spread of the compound.

Electrical Characteristics:
Parameter Symbol Test Conditions Rating Unit
Forward Condition
Maximum DC Output Current IO TC = +85°C, Full Bridge Circuits
(NTE5700, NTE5701, NTE5702)		 25 A
Maximum Average ON-State Current IT(AV) 180° Sine Wave Conduction Circuits
(All Types)		 12.5 A
Maximum Average Forward Current IF(AV) 12.5 A
Maximum RMS Current IRMS 180° Sine Wave Conduction Circuit (NTE5702 Only) 28 A
Maximum Peak, One-Cycle Non-Repetitive On-State or Forward Current ITSM
or
IFSM		 10ms 100% VRRM Reapplied Sinusoidal Half Wave, Initial TJ = TJ Max 300 A
8.3ms 315 A
10ms No Voltage Reapplied 357 A
8.3ms 375 A
Maximum I2t for Fusing I2t 10ms 100% VRRM Reapplied Initial TJ = TJ Max 450 A2s
8.3ms 410 A2s
10ms No Voltage Reapplied 637 A2s
8.3ms 580 A2s
Maximum Value of Threshold Voltage VT(TO) TJ = +125°C 0.82 V
Maximum Value of On-State Slope Resistance rT TJ = +125°C 12 m Ohm
Maximum Peak On-State Voltage VTM ITM = 3.14 x IT(AV) TJ = +25°C, 108° Condition 1.35 V
Maximum Peak Forward Voltage VFM IFM = 3.14 x IT(AV) 1.35 V
Maximum Non-Repetitive Rate-of-Rise of Turned On Circuit di/dt TJ = +125°C, from 0.67VDRM, ITM = 3.14 x IT(AV), Ig = 500mA, tr < 0.5µs, tp > 6µs 200 A / µs
Maximum Holding Current IH TJ = +25°C, Anode Supply = 6V, Resistive Load, Gate Open Circuit 100 mA
Maximum Latching Current IL TJ = +25°C, Anode Supply = 6V, Resistive Load 250 mA
Triggering
Maximum Peak Gate Power PGM   8 W
Maximum Average Gate Power PG(AV)   2 W
Maximum Peak Gate Current IGM   2 A
Maximum Peak Negative Gate Voltage -VGM   10 V
Maximum Gate Voltage Required to Trigger VGT TJ = -40°C Anode Supply = 6V, Resistive Load 3 V
TJ = +25°C 2 V
TJ = +125°C 1 V
Maximum Gate Current Required to Trigger IGT TJ = -40°C Anode Supply = 6V, Resistive Load 90 mA
TJ = +25°C 60 mA
TJ = +125°C 35 mA
Maximum Gate Voltage that will not Trigger VGD TJ = +125°C, Rated VDRM Applied 0.2 V
Blocking
Maximum Critical Rate-of-Rise of Off-State Voltage dv / dt TJ = +125°C, Exponential to 0.67VDRM, Gate Open Circuit 200 V / µs
Maximum Peak Reverse Leakage Current at VRRM IRM TJ = TJ Max, Gate Open Circuit 10 mA
Maximum Off-State Leakage Current at VDRM IDM 2 mA
RMS Isolation Voltage VINS 50Hz, Circuit-to-Base, All Terminals Shorted 2500 V

Pin Connection and Schematic Diagrams: (* For transient protection, a Metal Oxide Varistor (MOV)
may be connected externally across terminals AC1 & AC2.)
NTE No. Description Terminal Positions Schematic Diagrams
5700 Single Phase,
Hybrid Bridge,
Common Cathode,
Freewheeling Diode		 Pin Connection Diagram Schematic Diagram
5701 Single Phase,
Hybrid Bridge,
Common Anode,
Freewheeling Diode		 Pin Connection Diagram Schematic Diagram
5702 Single Phase,
All SCR Bridge		 Pin Connection Diagram Schematic Diagram
5703 SCR AC Switch Pin Connection Diagram Schematic Diagram
5704 Hybrid Doubler Pin Connection Diagram Schematic Diagram
5705 SCR Doubler Pin Connection Diagram Schematic Diagram

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