Photon Coupled Interrupter Module
NTE
Type
No.		 Output Transistor
Configuration		 Maximum Emitter Specifications Maximum Detector Specifications Total
Power
Dissipation
(mW)		 Typical Switching Speeds
Reverse
Breakdown
Voltage
(Volts)		 Forward
Current
(mA)		 Forward
Voltage
Drop
(Volts)		 Collector
Emitter
Voltage
(Volts)		 Collector
Current
(mA)		 Collector
Dark
Current
(nA)		 Turn-On
Time
(µs)		 Turn-Off
Time
(µs)
V(BR)R IF VF @ IF VCEO IC ICEO PD ton toff
3100 NPN Transistor 6 60 1.7 55 100 100 250 8 50
3101 NPN Darlington 6 60 1.7 55 100 100 250 7 45
3102 NPN Transistor 6 60 1.7 55 100 100 250 8 50
3103 NPN Darlington 6 60 1.7 55 100 100 250 7 45
3104 NPN Transistor 3 50 1.2 30 20 200 75 15 15
3105 NPN Transistor 3 50 1.3 30 20 200 75 20 20
Note:  All units feature 1mm aperture. All NTE Photon Coupled Interrupter Modules are manufactured using a gallium arsenide emitting diode coupled to a silicon phototransistor or darlington. The gap in the housing provides a means of interrupting the signal with an opaque material thereby switching the output from "ON" into an "OFF" state.

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