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ELECTRONIC EAVESDROPPING
DEVICES DETECTOR
The placement of electronic eavesdropping devices in homes
and companies offices is becoming - unfortunately - a usual
phenomenon through the passing of the years. Espionage movies admirers, is possible to
remember scenes of the placement of very small components (which had the format of a
button or a lentil) in rooms or offices which are not far away from the reality. However,
the detection of electronic eavesdropping devices is not so easy, even though it is known
their placement. The reason is the very small format and their similarity to other things
which we use every day. Using the detector that is described in this article, you can
ensure the privacy of your personal life because it allows you to sweep
for electronic eavesdropping devices. |
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Technical Specifications - Characteristics |
Supply voltage : |
9V(DC) |
Dissipation current: |
30mA (max) |
Detection range: |
1 - 1000 MHz |
Acoustic indication using a loudspeaker |
Sensitivity adjustment using a potentiometer. |
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Electronic bugs are very small radio frequency
transmitters, that are secretly placed in a room that is to be monitored. Since most bugs
are RF sources, almost any wideband receiver can be used as a detector. Our detector
detects an RF signal ranging from 1 to 1000 MHz. Figure 1 shows the schematic diagram of
the detector. When the electronic bug operates, it emits an RF signal. This signal is
received by the antenna (point 1 of figure 1) and is applied to the base of the transistor
TR1 through a high-pass filter ( a filter that permits the passing of high frequencies).
The high-pass filter consists of the capacitors C4, C5 and the resistor R7.
When low frequency signals are applied to the input of the filter, the
capacitors C4 and C5 operate as open switches and the filter rejects the low frequency
signals. The cut-off frequency of the high-pass filter is defined to be 60 Hz rejecting
any interferences which come from the mains. The transistor TR1 is in common collector
conjunction and it is used to amplify the signal. The gain that is provided is 10dB for a
signal that varies in the frequency range 1 - 1000 MHz. The resistors R1, R2, R8 form the
biasing network for the transistor TR1. The amplified signal is then applied, via the
capacitor C6, to the anode of the diode D1. The diode is particularly manufactured to
operate in high frequencies, since a common diode can not go from the conduction condition
to the cut-off condition very fast preventing the appearance of reverse currents.
However the operation of the diode in the high frequencies range results
in the appearance of a conduction at the beginning of the negative half period. The
potentiometer P1 adjusts the proportion of the signal at the terminals of the diode D1 and
applies it to the inverting input (pin 2) of the operational amplifier A1. The
operational amplifier A1 is configured as a very high gain amplifier. The value of the
gain is defined by the capacitor C8 and the resistors R6 and R12. With no signal input
from the antenna, the output of A1 at pin 1 is near ground potential. When the antenna
detects a signal in the range 1 - 1000 MHz, it applies it to the base of the transistor
TR1 producing a negative-going voltage at the cathode of diode D1.
That voltage is applied to the inverting input of A1 which amplifies and inverts the
signal, producing a positive-going output at pin 1. The next stage after the op. amp. A1
is a voltage controlled oscillator (VCO). The oscillation frequency of VCO is controlled
by the output voltage of the operational amplifier A1. The operational amplifiers A2, A4,
along with the resistors R11, R13, R14, R16, R17, R18, R19, R20, R21, R23, the capacitor
C9 and the transistor TR2 are arranged to form a voltage-controlled oscillator (VCO) that
operates out of the audio-frequency range. As the output of A1 increases, the frequency of
the VCO increases. The VCO output, at pin 8 of the operational amplifier A4, is fed to the
input of A3, which is configured as a non-inverting unity gain (buffer) amplifier. The
output of A3 is used to drive the transistor TR3, which, in turn, drives the output
speaker
Before you start the construction of the circuit you must follow the
basic instructions. Place and solder the socket of the IC1. Then install the passive
components (resistors, capacitors) on the board checking for the right placement and
orientation. After this, install the semiconductors (diode, transistors, IC). You ought to
be very careful in order to avoid the overheating of the IC’s diodes and transistors
terminals. Place the IC1 on its base, checking for the right orientation. Use a 25W iron
solder without using soldering flux. When you have finished the structure of the circuit,
check your work for the common construction errors (misoriented components, solder
bridges, misplaced components), particularly where the transistors and diode are
concerned.
Check if there are any dry joints. A proper joint is spread all over the pad and is
shiny. A dry one is dull, bulky and has the shape of the ball. If everything is correct,
clean the printed circuit board using a proper spray. Finally, install the board in
a metal box connecting its chassis to the ground of the circuit (point 5). Connect the
speaker to the points 2 and 3, and the antenna to the point 1 (see figure 1). Use a 9V
battery to supply the circuit. The clip of the battery is connected to the points 4 and 5.
The red wire of the clip (positive/+) is connected to point 4, while the black one
(negative/-) to point 5.
Afterwards, stand in the middle of the room you want to check. Adjust the potentiometer
in order the sound coming from the loudspeaker LS to be slightly audible. You must do this
in order the external electromagnetic fields to be ignored. Begin the detection of an RF
signal in the room. The loudspeaker will start to sound, when a signal in the frequency
range (1 - 1000MHz) will be detected.
Parts List |
Resistors : |
Capacitors : |
R1 = 39 KÙ |
C1 = 10nF ceramic |
R2 = 470 Ù |
C2 = 4,7 ìF/16V electrolytic |
R3 = 22 Ù |
C3 = 10nF ceramic |
R4 = 100 Ù |
C4 = 1nF ceramic |
R5 = 560 Ù |
C5 = 10nF ceramic |
R6 = 1 MÙ |
C6 = 10nF ceramic |
R7 = 220 Ù |
C7 = 10nF ceramic |
R8 = 100 KÙ |
C8 = 10nF ceramic |
R9 = 4,7 KÙ |
C9 = 4,7nF ceramic |
R10 = 1,5 KÙ |
C10 = 10 ìF/16V electrolytic |
R11 = 10 KÙ |
Chip : |
R12 = 220 Ù |
IC1 = ÌC3403P Motorola |
R13 = 10 KÙ |
Transistors : |
R14 = 100 KÙ |
TR1 = BFR 90A |
R15 = 470 Ù |
TR2 = 2N2222 |
R16 = 47 KÙ |
TR3 = 2N2222 |
R17 = 47 KÙ |
Diode : |
R18 = 1 KÙ |
D1 = NTE 112 |
R19 = 10 KÙ |
Potesiometer : |
R20 = 100 KÙ |
P1 = 4,7K Linear ðïíôåóéüìåôño |
R21 = 47 KÙ |
Other : |
R22 = 10 KÙ |
ÁNT = telescopic antenna. Radio type. |
R23 = 47 KÙ |
LS = Loundspeaker 8Ù |
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